Title :
RF front-end of direct conversion receiver RFIC for cdma-2000
Author :
Hafizi, Madjid ; Feng, Shen ; Fu, Taoling ; Schulze, Kim ; Ruth, Robert ; Schwab, Richard ; Karlsen, Per ; Simmonds, David ; Gu, Qizheng
Author_Institution :
Nokia Mobile Phones, San Diego, CA, USA
Abstract :
We report on the front-end of a highly integrated dual-band direct-conversion receiver IC for cdma-2000 mobile handset applications. The RF front-end included a CELL-band low-noise amplifier (LNA), dual-band direct-conversion quadrature I/Q down-converters, and a local-oscillator (LO) signal generation circuit. At 2.7 V, the LNA had a noise figure of 1.2 dB and input third-order intermodulation product (IIP3) of 9 dBm. I/Q down-converters had a noise figure of 4-5 dB and IIP3 of 4-5 dBm and IIP2 of 55 dBm. An on-chip phase-locked loop and external voltage-controlled oscillator generated the LO signal. The receiver RFIC was implemented in a 0.35-μm SiGe BiCMOS process and meets or exceeds all cdma-2000 requirements when tested individually or on a handset.
Keywords :
3G mobile communication; BiCMOS integrated circuits; Ge-Si alloys; MMIC; UHF integrated circuits; code division multiple access; convertors; integrated circuit design; mobile handsets; phase locked loops; radio receivers; signal generators; voltage-controlled oscillators; 0.35 micron; 1.2 dB; 2.7 V; CELL-band low-noise amplifier; LO signal generation; RF front-end; SiGe; SiGe BiCMOS process; cdma-2000 requirements; direct-conversion I/Q down-converter; dual-band direct-conversion receiver IC; external voltage-controlled oscillator; input third-order intermodulation product; local-oscillator signal generation circuit; mobile handset; on-chip phase-locked loop; quadrature I/Q down-converter; receiver RFIC; Application specific integrated circuits; Dual band; Low-noise amplifiers; Mobile handsets; Noise figure; Phase locked loops; RF signals; Radio frequency; Radiofrequency integrated circuits; Signal generators;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2004.833551
