• DocumentCode
    1113342
  • Title

    Evidence of long-term storage of minority carriers in N+-GaAs/AlGaAs/P-GaAs MIS capacitors

  • Author

    Cooper, James A., Jr. ; Qian, Q.D. ; Melloch, Michael R.

  • Author_Institution
    Purdue University, West Lafayette, IN
  • Volume
    7
  • Issue
    6
  • fYear
    1986
  • fDate
    6/1/1986 12:00:00 AM
  • Firstpage
    374
  • Lastpage
    376
  • Abstract
    We have investigated the long-term retention of electrons in potential wells at the AlGaAs/GaAs interface at 77 K. By analyzing the steady-state capacitance-voltage (CV) and current-voltage (I-V) characteristics of N+-GaAs/AlGaAs/P-GaAs MIS capacitors under illumination, we can calculate the leakage rate of electrons over the AlGaAs barrier as a function of the density of electrons in the well. At 77 K, we obtain storage times of 135 ms, and we estimate that the intrinsic storage time in the dark may be greater than 500 ms. These values would be suitable for the development of a one-transistor dynamic random access memory (RAM) in the MODFET technology.
  • Keywords
    Capacitance-voltage characteristics; Capacitors; DRAM chips; Electrons; Gallium arsenide; Lighting; MODFETs; Potential well; Read-write memory; Steady-state;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1986.26405
  • Filename
    1486228
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1113342