• DocumentCode
    1113352
  • Title

    Preliminary ionizing radiation tests on n-channel inversion-mode GaInAs MISFET´s

  • Author

    Gardner, P.D. ; Naraya, S. Yenga ; Sluzark, W.J. ; McGee, D.J.

  • Author_Institution
    David Sarnoff Research Center, Princeton, NJ
  • Volume
    7
  • Issue
    6
  • fYear
    1986
  • fDate
    6/1/1986 12:00:00 AM
  • Firstpage
    377
  • Lastpage
    379
  • Abstract
    Preliminary results of low-dose rate ionizing radiation (cobalt-60) tests on n-channel inversion-mode GaInAs MISFET´s up to a total dose of 5 × 107rad(Si) are presented. The data show that the GaInAs MISFET threshold voltage shifts negatively up to a total dose of 5 × 105rad(Si), with a maximum shift of -0.9 V. The threshold voltage then shifts in a positive direction at higher doses. The mobility factor decreases very slightly and then increases with increasing dose.
  • Keywords
    Gallium arsenide; Indium phosphide; Ionizing radiation; Lattices; Logic circuits; MISFETs; Microwave devices; Semiconductivity; Testing; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1986.26406
  • Filename
    1486229
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1113352