• DocumentCode
    1113365
  • Title

    Buried and graded/buried LDD structures for improved hot-electron reliability

  • Author

    Wei, Ching-yeu ; Pimbley, J.M. ; Nissan-Cohen, Y.

  • Author_Institution
    General Electric Company, Schenectady, NY
  • Volume
    7
  • Issue
    6
  • fYear
    1986
  • fDate
    6/1/1986 12:00:00 AM
  • Firstpage
    380
  • Lastpage
    382
  • Abstract
    New buried and graded/buried lightly doped drain (LDD) structures have been demonstrated, for the first time, to improve significantly the hot-electron reliability of NMOS devices. Both LDD structures have peak doping of the n- spacer implant approximately 1000 A below the Si-SiO2interface forming a "buried" n- spacer near the drain region. In the graded/buried LDD structure the junction of the "buried" n- spacer is further graded by an additional low-dose phosphorus spacer implant.
  • Keywords
    Channel hot electron injection; Doping profiles; Electron traps; Energy barrier; Fabrication; Helium; Implants; MOS devices; Power supplies; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1986.26407
  • Filename
    1486230
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1113365