Title :
Photoreceiver module using an InP HEMT transimpedance amplifier for over 40 gb/s
Author :
Fukuyama, Hiroyuki ; Sano, Kimikazu ; Murata, Koichi ; Kitabayashi, Hiroto ; Yamane, Yasuro ; Enoki, Takatomo ; Sugahara, AndHirohiko
Author_Institution :
NTT Photonics Labs., NTT Corp., Kanagawa, Japan
Abstract :
We developed a photoreceiver module for over 40 Gb/s that uses two ultrahigh- speed device technologies: an InP HEMT transimpedance amplifier (TIA) and a uni-traveling-carrier photodiode (UTC-PD). The TIA was designed to have a wide dynamic range by using cascade HEMT topology for the output buffer. We found that reducing the standing wave at the PD-TIA interface by decreasing the change of arg(S11) of the TIA within the required frequency region is important for increasing the bandwidth of the module. We obtained a minimum sensitivity of -7.6 dBm and a dynamic range of 11 dB for 43-Gb/s nonreturn-to-zero optical input signal. Error-free operation of the module was confirmed at a data rate of 50 Gb/s.
Keywords :
HEMT integrated circuits; III-V semiconductors; hybrid integrated circuits; indium compounds; integrated optoelectronics; modules; optical receivers; photodiodes; very high speed integrated circuits; wideband amplifiers; 40 Gbit/s; 43 Gbit/s; 50 Gbit/s; HEMT topology; InP; InP HEMT transimpedance amplifier; PD-TIA interface; UTC-PD; nonreturn-to-zero optical input signal; output buffer; photoreceiver module; standing wave; ultrahigh-speed device technologies; unitraveling-carrier photodiode; Bandwidth; Dynamic range; Frequency; HEMTs; Indium phosphide; Optical amplifiers; Optical buffering; Optical sensors; Photodiodes; Topology; InP-based HEMT; TIA; UTC-PD; photoreceiver; standing wave; transimpedance amplifier; uni-traveling-carrier photodiode;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2004.833550
