DocumentCode :
1113385
Title :
Fully implanted p-column InP field-effect transistor
Author :
Woodhouse, J.D. ; Donnelly, J.P.
Author_Institution :
Massachusetts Institute of Technology, Lexington, MA
Volume :
7
Issue :
6
fYear :
1986
fDate :
6/1/1986 12:00:00 AM
Firstpage :
387
Lastpage :
389
Abstract :
P-column junction field-effect transistors (FET\´s) have been fabricated in semi-insulating InP utilizing an all-implanted planar technology. A periodic array of p+ columns implanted through an n-type channel layer is used to form the active region. Initial devices with nominal gate lengths of 4 µm exhibit a unity-power-gain frequency 
as high as 7 GHz while recent smaller gate length devices (nominally 1.7µm) show an of 16 GHz.
as high as 7 GHz while recent smaller gate length devices (nominally 1.7µm) show an of 16 GHz.Keywords :
Etching; FETs; Frequency; Gallium arsenide; Implants; Indium phosphide; Metallization; Millimeter wave technology; Millimeter wave transistors; Semiconductor materials;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1986.26409
Filename :
1486232
Link To Document :
