Title :
A 80-gbit/s D-type flip-flop circuit using InP HEMT technology
Author :
Suzuki, Toshihide ; Takahashi, Tsuyoshi ; Hirose, Tatsuya ; Takikawa, Masahiko
Author_Institution :
High-Speed IC Technol. Lab., Fujitsu Labs. Ltd., Kanagawa, Japan
Abstract :
80-Gbit/s operation of a static D-type flip-flop (D-FF) circuit was achieved using InP-based HEMT technology, which has a cut-off frequency of 245 GHz and a transconductance of 1500 mS/mm. The circuit was designed with differential operation based on source-coupled FET logic (SCFL). To overcome deterioration of the 80-GHz clock signals in a single-ended to differential signal converter in the input buffer, a rat-race circuit was used as a converter. Measurements showed that the circuit achieved a gain of over 2 dB higher than a conventional converter using a differential pair circuit, and power consumption was reduced from 380 to 260 mW. The power supply voltage was -5.7 V, and total power consumption was 1.2 W. Since there is no commercially available 80-Gbit/s-pulse pattern generator, we developed a selector module to measure the D-FF. These measurements showed that the D-FF successfully operated at 80 Gbit/s, which is almost twice the speed reported to date.
Keywords :
HEMT integrated circuits; III-V semiconductors; field effect transistors; flip-flops; indium compounds; -5.7 V; 1.2 W; 245 GHz; 380 to 260 mW; 80 GHz; 80 Gbit/s; 80-Gbit/s D-type flip-flop circuit; 80-Gbit/s measuring system; 80-Gbit/s-pulse pattern generator; InP; InP HEMT technology; SCFL; clock signals; cut-off frequency; differential operation; differential pair circuit; differential signal converter; input buffer; power consumption; rat-race circuit; selector module; single-ended converter; source-coupled FET logic; static D-type flip-flop circuit; Circuits; Cutoff frequency; Energy consumption; FETs; Flip-flops; HEMTs; Indium phosphide; Logic design; Power measurement; Transconductance; 0-Gbit/s measuring system; D-FF; D-type flip-flop; InP HEMT; rat-race; single-ended to differential converter;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2004.833554