Title :
Effects of a buried p-layer on alpha-particle immunity of MESFET´s fabricated on semi-insulating GaAs substrates
Author :
Umemoto, Y. ; Masuda, N. ; Mitsusada, K.
Author_Institution :
Hitachi, Ltd., Tokyo, Japan
fDate :
6/1/1986 12:00:00 AM
Abstract :
Measurements of alpha-particle-induced charge are carried out for the first time on both conventional MESFET´s fabricated directly on semi-insulating GaAs substrates and MESFET´s with a buried p-layer. The maximum collected charge is found to be 65 fC in the MESFET´s with a buried p-layer, one order smaller than in conventional MESFET´s.
Keywords :
Alpha particles; Charge carrier processes; Charge measurement; Circuits; Current measurement; Gallium arsenide; MESFETs; Packaging; Parasitic capacitance; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1986.26412
