Title :
96-GHz static frequency divider in SiGe bipolar technology
Author :
Rylyakov, Alexander ; Zwick, Thomas
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
A static frequency divider designed in a 210-GHz fT, 0.13-μm SiGe bipolar technology is reported. At a -5.5-V power supply, the circuit consumes 44 mA per latch (140 mA total for the chip, with input-output stages). With single-ended sine wave clock input, the divider is operational from 7.5 to 91.6 GHz. Differential clocking under the same conditions extends the frequency range to 96.6 GHz. At -5.0 V and 100 mA total current (28 mA per latch), the divider operates from 2 to 85.2 GHz (single-ended sine wave input).
Keywords :
Ge-Si alloys; bipolar integrated circuits; frequency dividers; semiconductor materials; -5.0 V; -5.5 V; 0.13 micron; 100 mA; 140 mA; 2 to 85.2 GHz; 210 GHz; 28 mA; 44 mA; 7.5 to 96.6 GHz; 96 GHz; SiGe; SiGe bipolar technology; differential clocking; power supply; single-ended sine wave clock input; single-ended sine wave input; static frequency divider; Breakdown voltage; Circuits; Clocks; Diodes; Frequency conversion; Germanium silicon alloys; Heterojunction bipolar transistors; Latches; Power supplies; Silicon germanium; SiGe; static frequency dividers;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2004.833562
