Monolithically-integrated hybrid heterostructure diode laser with dielectric-film waveguide DBR

Author

Alferov, Zh.I. ; Gurevich, S.A. ; Karpov, S. Yu ; Portnoi, E.L. ; Timofeev, F.N.

Author_Institution

Academy of Sciences of the U.S.S.R., Leningrad, U.S.S.R

Volume

23

Issue

6

fYear

1987

fDate

6/1/1987 12:00:00 AM

Firstpage

869

Lastpage

881

Abstract

In the monolithically-integrated hybrid (MIH) DBR diode laser, the five-layer Ga(Al)As-GaAs heterostructure waveguide of the gain region was monolithically butt-joined on a common GaAs substrate with a highly-transparent corrugated dielectric-film waveguide consisting of sputtered SiO2, Ta2O5, and evaporated (corrugated) As2S3layers. The laser operated with the first-order grating under the pulsed current pumping at 300 K. The efficient resonant mode conversion (70 percent in power) has been obtained at the interface between the heterostructure and dielectric waveguides. The fundamental transverse and single-longitudinal mode output emission was obtained up to 160 mW ( $Ith = 120$ mA) with external differential quantum efficiency $\\eta \\simeq 32$ percent. The advantages of a dielectric-film waveguide DBR are demonstrated. The use of such a DBR results in a high degree of sidemode suppression and stability of the spectral position of the emission line under the temperature variation, the corresponding spectral shift being $l\\sim 0.01$ Å/K.

Keywords

Corrugated waveguides; Distributed Bragg reflector lasers; Gallium materials/lasers; Optical planar waveguides; Planar optical waveguide; Dielectric substrates; Diode lasers; Distributed Bragg reflectors; Gallium arsenide; Gratings; Laser modes; Optical pulses; Power lasers; Pump lasers; Waveguide lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.1987.1073405

Filename

1073405