• DocumentCode
    1113458
  • Title

    High-power output over 200 mW of 1.3 µm GaInAsP VIPS lasers

  • Author

    Oshiba, Saeko ; Matoba, Akio ; Kawahara, Masato ; Kawai, Yoshio

  • Author_Institution
    Oki electric Industry Co., Ltd., Tokyo, Japan
  • Volume
    23
  • Issue
    6
  • fYear
    1987
  • fDate
    6/1/1987 12:00:00 AM
  • Firstpage
    738
  • Lastpage
    743
  • Abstract
    Maximum CW output power was investigated in GaInAsP 1.3μm V-grooved inner stripe on P-substrate (VIPS) lasers considering both cavity length and facet reflectivity. Long-cavity lasers show a strong dependence of maximum output power on front reflectivity. A CW light output over 200 mW was obtained at room temperature using a 700 μm long cavity laser with 5 and 98 percent reflectivity of the front and rear facets, respectively. The fundamental transverse mode operation was confirmed up to 170 mW. A coupled power over 110 mW into a single-mode fiber was achieved with a coupling efficiency of 58 percent. We have verified the high reliability under high power levels, as high as 75 percent of the maximum CW output powers at room temperature.
  • Keywords
    CW lasers; Gallium materials/lasers; Aging; Coatings; Current density; Etching; Power generation; Power lasers; Reflectivity; Temperature distribution; Thermal resistance; Threshold current;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1987.1073407
  • Filename
    1073407