DocumentCode
1113458
Title
High-power output over 200 mW of 1.3 µm GaInAsP VIPS lasers
Author
Oshiba, Saeko ; Matoba, Akio ; Kawahara, Masato ; Kawai, Yoshio
Author_Institution
Oki electric Industry Co., Ltd., Tokyo, Japan
Volume
23
Issue
6
fYear
1987
fDate
6/1/1987 12:00:00 AM
Firstpage
738
Lastpage
743
Abstract
Maximum CW output power was investigated in GaInAsP 1.3μm V-grooved inner stripe on P-substrate (VIPS) lasers considering both cavity length and facet reflectivity. Long-cavity lasers show a strong dependence of maximum output power on front reflectivity. A CW light output over 200 mW was obtained at room temperature using a 700 μm long cavity laser with 5 and 98 percent reflectivity of the front and rear facets, respectively. The fundamental transverse mode operation was confirmed up to 170 mW. A coupled power over 110 mW into a single-mode fiber was achieved with a coupling efficiency of 58 percent. We have verified the high reliability under high power levels, as high as 75 percent of the maximum CW output powers at room temperature.
Keywords
CW lasers; Gallium materials/lasers; Aging; Coatings; Current density; Etching; Power generation; Power lasers; Reflectivity; Temperature distribution; Thermal resistance; Threshold current;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1987.1073407
Filename
1073407
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