Title :
Experimental 3C-SiC MOSFET
Author :
Kondo, Y. ; Takahashi, T. ; Ishii, K. ; Hayashi, Yutaka ; Sakuma, E. ; Misawa, S. ; Daimon, H. ; Yamanaka, M. ; Yoshida, S.
Author_Institution :
Electrotechnical Laboratory, Ibaraki, Japan
fDate :
7/1/1986 12:00:00 AM
Abstract :
Cubic-SiC (3C-SiC) MOSFET´s were successfully fabricated for the first time on a 3C-SiC film heteroepitaxially grown on an Si substrate. The device showed acceptable static characteristics. A novel device structure was devised, which enabled the use of conventional equipment for silicon devices, and eliminated dedicated processes for a stable and rigid SiC film.
Keywords :
Aluminum; Fabrication; MOSFET circuits; Optical films; Semiconductor films; Silicon carbide; Silicon devices; Substrates; Temperature; Thermal conductivity;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1986.26417
