• DocumentCode
    1113483
  • Title

    A gate probe method of determining parasitic resistance in MESFET´s

  • Author

    Holmstrom, Roger P. ; Bloss, Walter L. ; Chi, Jim Y.

  • Author_Institution
    GTE Laboratories Incorporated, Waltham, MA
  • Volume
    7
  • Issue
    7
  • fYear
    1986
  • fDate
    7/1/1986 12:00:00 AM
  • Firstpage
    410
  • Lastpage
    412
  • Abstract
    A gate probe method has been developed to accurately determine source, drain, and channel resistances of MESFET´s. The method employs the gate current crowding phenomenon at higher drain currents. An exact equation was derived for the resistances whose fit to the data provides a self-consistent check of the determined parameters.
  • Keywords
    Contact resistance; Diodes; Electrical resistance measurement; Equations; MESFETs; Particle measurements; Probes; Proximity effect; Semiconductor device modeling; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1986.26419
  • Filename
    1486242
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1113483