DocumentCode :
1113507
Title :
AlGaAs/GaAs self-aligned LD´s fabricated by the process containing vapor phase etching and subsequent MOVPE regrowth
Author :
Nido, Masaaki ; Komazaki, Iwao ; Kobayashi, Kenichi ; Endo, Kenji ; Ueno, Masayasu ; Kamejima, Taibun ; Suzuki, Tohru
Author_Institution :
NEC Corporation, Kawasaki, Kanagawa, Japan
Volume :
23
Issue :
6
fYear :
1987
fDate :
6/1/1987 12:00:00 AM
Firstpage :
720
Lastpage :
724
Abstract :
A new fabrication process has been successfully applied for the first time to the AlGaAs/GaAs laser diode. This new process includes vapor phase etching and subsequent MOVPE regrowth. Self-aligned LD\´s fabricated by this process have shown sufficiently good characteristics ( 
mA, 
percent), and good reliability (no degradation at least up to 1000 h:50°C, 5mW, automatic power control mode).
mA, percent), and good reliability (no degradation at least up to 1000 h:50°C, 5mW, automatic power control mode).Keywords :
Epitaxial growth; Gallium materials/lasers; Crystals; Diode lasers; Epitaxial growth; Epitaxial layers; Etching; Gallium arsenide; National electric code; Optical device fabrication; Protection; Temperature;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1987.1073412
Filename :
1073412
Link To Document :
