• DocumentCode
    1113507
  • Title

    AlGaAs/GaAs self-aligned LD´s fabricated by the process containing vapor phase etching and subsequent MOVPE regrowth

  • Author

    Nido, Masaaki ; Komazaki, Iwao ; Kobayashi, Kenichi ; Endo, Kenji ; Ueno, Masayasu ; Kamejima, Taibun ; Suzuki, Tohru

  • Author_Institution
    NEC Corporation, Kawasaki, Kanagawa, Japan
  • Volume
    23
  • Issue
    6
  • fYear
    1987
  • fDate
    6/1/1987 12:00:00 AM
  • Firstpage
    720
  • Lastpage
    724
  • Abstract
    A new fabrication process has been successfully applied for the first time to the AlGaAs/GaAs laser diode. This new process includes vapor phase etching and subsequent MOVPE regrowth. Self-aligned LD\´s fabricated by this process have shown sufficiently good characteristics ( Ith = 50-60 mA, \\eta_{D} = 40-45 percent), and good reliability (no degradation at least up to 1000 h:50°C, 5mW, automatic power control mode).
  • Keywords
    Epitaxial growth; Gallium materials/lasers; Crystals; Diode lasers; Epitaxial growth; Epitaxial layers; Etching; Gallium arsenide; National electric code; Optical device fabrication; Protection; Temperature;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1987.1073412
  • Filename
    1073412
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1113507