Title :
A tunneling emitter bipolar transistor
Author :
Xu, Jingming ; Shur, Michael
Author_Institution :
University of Minnesota, Minneapolis, MN
fDate :
7/1/1986 12:00:00 AM
Abstract :
We propose a new device-a Tunneling Emitter Bipolar Transistor (TEBT)-where the enhancement of the emitter injection efficiency is achieved by utilizing a very large difference in the tunneling probabilities for electrons and holes in a thin doped graded AlGaAs layer. This layer is inserted between the n-type GaAs emitter and p-type GaAs base. This device should have a high emitter efficiency and low parasitic resistances.
Keywords :
Bipolar transistors; Charge carrier processes; Contact resistance; Doping; Effective mass; Electron emission; Gallium arsenide; Heterojunction bipolar transistors; Silicon; Tunneling;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1986.26421
