• DocumentCode
    1113508
  • Title

    A tunneling emitter bipolar transistor

  • Author

    Xu, Jingming ; Shur, Michael

  • Author_Institution
    University of Minnesota, Minneapolis, MN
  • Volume
    7
  • Issue
    7
  • fYear
    1986
  • fDate
    7/1/1986 12:00:00 AM
  • Firstpage
    416
  • Lastpage
    418
  • Abstract
    We propose a new device-a Tunneling Emitter Bipolar Transistor (TEBT)-where the enhancement of the emitter injection efficiency is achieved by utilizing a very large difference in the tunneling probabilities for electrons and holes in a thin doped graded AlGaAs layer. This layer is inserted between the n-type GaAs emitter and p-type GaAs base. This device should have a high emitter efficiency and low parasitic resistances.
  • Keywords
    Bipolar transistors; Charge carrier processes; Contact resistance; Doping; Effective mass; Electron emission; Gallium arsenide; Heterojunction bipolar transistors; Silicon; Tunneling;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1986.26421
  • Filename
    1486244
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1113508