Title :
Low threshold current AlGaAs/GaAs rib-waveguide separate-confinement-heterostructure distributed-feedback lasers grown by metalorganic chemical vapor deposition
Author :
Honda, Kazuo ; Hirata, Shoji ; Ohata, Toyoharu ; Horii, Shinichi ; Kojima, C.
Author_Institution :
Sony Corporation Research Center, Yokohama, Japan
fDate :
6/1/1987 12:00:00 AM
Abstract :
AlGaAs/GaAs rib-waveguide separate-confinement-heterostructure (SCH) distributed-feedback (DFB) lasers emitting at 880 nm were fabricated by a two-step atmospheric pressure metalorganic chemical vapor deposition (MOCVD) growth technique. A CW threshold current as low as 18 mA and an output power of more than 10 mW per facet at room temperature were obtained. Also, single longitudinal and fundamental transverse modes were maintained up to more than twice the threshold current level.
Keywords :
Distributed feedback (DFB) lasers; Gallium materials/lasers; Semiconductor growth; Chemical lasers; Chemical vapor deposition; Gallium arsenide; Gratings; Laser modes; MOCVD; Optical sensors; Surface emitting lasers; Threshold current; Waveguide lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1987.1073413
