Title :
The inverse-narrow-width effect
Author_Institution :
Arizona State University, Tempe, AZ
fDate :
7/1/1986 12:00:00 AM
Abstract :
For the first time an analytical expression can simulate the inverse-narrow-width effect. The inverse-narrow-width effect is a reduction in the threshold voltage of a MOSFET with decreasing channel width. We compare the model with experimental threshold voltage data from small-geometry PMOS devices with fully recessed isolation oxides and an inverse-narrow-width effect is predicted.
Keywords :
Analytical models; Computational modeling; Computer simulation; Electrodes; MOS devices; MOSFET circuits; Predictive models; Solid modeling; Threshold voltage; Ultra large scale integration;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1986.26422
