Title :
Ion implanted contacts to a-Si:H thin-film transistors
Author :
Bare, H.F. ; Neudeck, Gerold W.
Author_Institution :
Purdue University, West Lafayette, IN
fDate :
7/1/1986 12:00:00 AM
Abstract :
Fabrication steps to improve ion implanted source-drain contacts to hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFT´s) have been determined. After establishing a contact performance baseline using devices made with Al/intrinsic a-Si:H contacts, improvements were made to the metal/a-Si:H contact scheme using unheated and heated implants, single- and double-level phosphorous implants, a buffered HF acid dip just prior to metal deposition, Al and Al-Si-Cu metallization schemes, and a post-metallization anneal.
Keywords :
Amorphous silicon; Annealing; Contacts; Implants; Ion implantation; Metallization; Neodymium; Semiconductor device doping; Substrates; Thin film transistors;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1986.26426