DocumentCode :
1113560
Title :
Ion implanted contacts to a-Si:H thin-film transistors
Author :
Bare, H.F. ; Neudeck, Gerold W.
Author_Institution :
Purdue University, West Lafayette, IN
Volume :
7
Issue :
7
fYear :
1986
fDate :
7/1/1986 12:00:00 AM
Firstpage :
431
Lastpage :
433
Abstract :
Fabrication steps to improve ion implanted source-drain contacts to hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFT´s) have been determined. After establishing a contact performance baseline using devices made with Al/intrinsic a-Si:H contacts, improvements were made to the metal/a-Si:H contact scheme using unheated and heated implants, single- and double-level phosphorous implants, a buffered HF acid dip just prior to metal deposition, Al and Al-Si-Cu metallization schemes, and a post-metallization anneal.
Keywords :
Amorphous silicon; Annealing; Contacts; Implants; Ion implantation; Metallization; Neodymium; Semiconductor device doping; Substrates; Thin film transistors;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1986.26426
Filename :
1486249
Link To Document :
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