DocumentCode :
1113572
Title :
Y-Junction semiconductor laser arrays: Part II--Experiments
Author :
Welch, David F. ; Streifer, William ; Cross, Peter S. ; Scifres, Denold R.
Author_Institution :
Spectra diode Laboratories, San Jose, CA
Volume :
23
Issue :
6
fYear :
1987
fDate :
6/1/1987 12:00:00 AM
Firstpage :
752
Lastpage :
756
Abstract :
Laser arrays employing 
-junctions to coherently couple the emitters in-phase have been fabricated by metalorganic chemical vapor deposition. The far-field patterns are stable and centered normal to the facet. They are typically multilobed in accordance with the diffraction pattern of multiple emitters. By the use of flared waveguides near the facets the near-field fill factor can be increased to greater than 80 percent. This modification concentrates the radiation in the central diffraction lobe. Power outputs of 200 mW CW have been obtained from a ten element array of 1.5μm wide emitters.
-junctions to coherently couple the emitters in-phase have been fabricated by metalorganic chemical vapor deposition. The far-field patterns are stable and centered normal to the facet. They are typically multilobed in accordance with the diffraction pattern of multiple emitters. By the use of flared waveguides near the facets the near-field fill factor can be increased to greater than 80 percent. This modification concentrates the radiation in the central diffraction lobe. Power outputs of 200 mW CW have been obtained from a ten element array of 1.5μm wide emitters.Keywords :
Laser arrays; Semiconductor lasers; Chemical vapor deposition; Diffraction; Laser modes; Optical arrays; Optical coupling; Optical waveguides; Refractive index; Semiconductor laser arrays; Substrates; Waveguide lasers;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1987.1073418
Filename :
1073418
Link To Document :
