DocumentCode :
1113641
Title :
AlGaInP double heterostructure visible-light laser diodes with a GaInP active layer grown by metalorganic vapor phase epitaxy
Author :
Kobayashi, Kenichi ; Hino, Isao ; Gomyo, Akiko ; Kawata, Seiji ; Suzuki, Tohru
Author_Institution :
NEC corporation, Kawasaki, Kanagawa, Japan
Volume :
23
Issue :
6
fYear :
1987
fDate :
6/1/1987 12:00:00 AM
Firstpage :
704
Lastpage :
711
Abstract :
AlGaInP double heterostructure laser diodes with a GaInP active layer constitute a basic laser structure for visible-light lasers using an AlGaInP alloy system. This paper gives a detailed description of (AlxGa1-x)0.5In0.5P metalorganic vapor phase epitaxial growth, laser-fabrication processes, and basic device-characteristics for these lasers. The obtained pulsed-threshold-current was about 3.8 kA/cm2(3.2 kA/cm2minimum) for laser diodes with an 8-10 \\mu m wide and 150-300 \\mu m long injection stripe. High characteristic-temperature T0for the temperature dependence of pulsed threshold current was obtained and was found to be dependent on band-gap-energy differences between active layers and cladding layers. The maximum value for T0was 222 K. The lasing wavelength of an AlGaInP double heterostructure laser diode with a GaInP active layer was found to depend on growth conditions and dopant behavior during the growth, and it varied in a range from 664 to 690 nm, while the GaInP active layers were lattice-matched to GaAs substrates. This lasing wavelength difference caused by a crystal growth-condition difference, including a dopant effect, can be explained by the Ga0.5In0.5P band-gap-energy difference due to the crystal structure difference of Ga0.5In0.5P. Lasing operations (3-5 mW) over 2000 h at room temperature without significant degradation were obtained, demonstrating the highly promising nature of visible-light laser diodes using an AlGaInP alloy system.
Keywords :
Epitaxial growth; Gallium materials/lasers; Visible lasers; DH-HEMTs; Diode lasers; Epitaxial growth; Epitaxial layers; Gallium arsenide; Molecular beam epitaxial growth; Optical pulses; Optical pumping; Substrates; Temperature;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1987.1073424
Filename :
1073424
Link To Document :
بازگشت