DocumentCode
1113658
Title
High-Power Broadband Superluminescent Diode Using Selective Area Growth at 1.5-μ m Wavelength
Author
Song, Jung Ho ; Kim, Kisoo ; Leem, Young Ahn ; Kim, Gyungock
Author_Institution
Electron. and Telecommun. Res. Inst., Daejeon
Volume
19
Issue
19
fYear
2007
Firstpage
1415
Lastpage
1417
Abstract
Superluminescent diode with a selectively grown multiquantum-well layer is demonstrated. The device consists of an angled facet single-mode waveguide with a rear absorption region. High output power (77 mW), wide spectral bandwidth (71-nm full-width at half-maximum), and a very small spectral modulation (0.7 dB) were achieved with a short length absorption region.
Keywords
semiconductor growth; semiconductor quantum wells; superluminescent diodes; high-power broadband diode; multiquantum-well layer; power 77 mW; rear absorption region; selective area growth; single-mode waveguide; superluminescent diode; wavelength 1.5 mum; wavelength 71 nm; Absorption; Bandwidth; Optical modulation; Optical sensors; Power generation; Quantum dots; Quantum well devices; Quantum wells; Superluminescent diodes; Temperature; Broadband source; quantum well; selective area growth (SAG); superluminescent diode (SLD);
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2007.902946
Filename
4298943
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