Investigation of the blueshift in electroluminescence spectra from MOCVD grown InGaAs quantum dots

Author

Lever, P. ; Buda, M. ; Tan, H.H. ; Jagadish, C.

Author_Institution

Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia

Volume

40

Issue

10

fYear

2004

Firstpage

1410

Lastpage

1416

Abstract

The electroluminescence of a quantum-dot (QD) laser diode was found to blueshift as the injection current is increased. The carrier distribution within the QD layers was modeled and the Stark shift, measured from photocurrent, was used to explain the large blueshift seen in the electroluminescence. The built-in electric dipole was found to be dependant on growth conditions.

Keywords

III-V semiconductors; MOCVD; Stark effect; carrier density; electroluminescence; gallium arsenide; indium compounds; quantum dot lasers; semiconductor device models; semiconductor growth; semiconductor quantum dots; spectral line shift; InGaAs; InGaAs quantum dots; MOCVD; Stark shift; blueshift; carrier distribution; electric dipole; electroluminescence spectra; photocurrent; quantum dot laser diode; semiconductor lasers; Electroluminescence; Electroluminescent devices; Indium gallium arsenide; MOCVD; Photoconductivity; Quantum dot lasers; Quantum dots; Shape; US Department of Transportation; Waveguide lasers; Electroluminescence; QDs; photocurrent; quantum dots; semiconductor laser;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2004.834777

Filename

1337021