Title :
High-Brightness InGaN–GaN Flip-Chip Light-Emitting Diodes With Triple-Light Scattering Layers
Author :
Lee, Chia-En ; Lee, Yea-Chen ; Kuo, Hao-Chung ; Lu, Tien-Chang ; Wang, Shing-Chung
Author_Institution :
Nat. Chiao Tung Univ., Hsinchu
fDate :
4/15/2008 12:00:00 AM
Abstract :
The flip-chip light-emitting diodes (FC-LEDs) with triple-light scattering layers were investigated comprising a top surface sapphire textured layer, an interface patterned sapphire layer, and a bottom naturally textured p-GaN layer. Such triple-textured layers are useful for light extraction efficiency enhancement. The light output power of FC-LEDs was increased 60% (at 350-mA current injection) compared to that of conventional FC-LEDs by implementing the triple-light scattering layers.
Keywords :
III-V semiconductors; flip-chip devices; gallium compounds; indium compounds; light emitting diodes; wide band gap semiconductors; InGaN-GaN; flip-chip light-emitting diodes; interface patterned sapphire layer; light extraction; triple-light scattering layers; triple-textured layers; Associate members; Life members; Light emitting diodes; Light scattering; Optical reflection; Particle scattering; Power generation; Substrates; Surface texture; Thermal conductivity; Flip-chip light-emitting diodes (FC-LEDs); naturally textured p-GaN layer; patterned sapphire; sapphire textured layer; triple-light scattering layers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2008.919509
