High-Brightness InGaN–GaN Flip-Chip Light-Emitting Diodes With Triple-Light Scattering Layers

Author

Lee, Chia-En ; Lee, Yea-Chen ; Kuo, Hao-Chung ; Lu, Tien-Chang ; Wang, Shing-Chung

Author_Institution

Nat. Chiao Tung Univ., Hsinchu

Volume

20

Issue

8

fYear

2008

fDate

4/15/2008 12:00:00 AM

Firstpage

659

Lastpage

661

Abstract

The flip-chip light-emitting diodes (FC-LEDs) with triple-light scattering layers were investigated comprising a top surface sapphire textured layer, an interface patterned sapphire layer, and a bottom naturally textured p-GaN layer. Such triple-textured layers are useful for light extraction efficiency enhancement. The light output power of FC-LEDs was increased 60% (at 350-mA current injection) compared to that of conventional FC-LEDs by implementing the triple-light scattering layers.

Keywords

III-V semiconductors; flip-chip devices; gallium compounds; indium compounds; light emitting diodes; wide band gap semiconductors; InGaN-GaN; flip-chip light-emitting diodes; interface patterned sapphire layer; light extraction; triple-light scattering layers; triple-textured layers; Associate members; Life members; Light emitting diodes; Light scattering; Optical reflection; Particle scattering; Power generation; Substrates; Surface texture; Thermal conductivity; Flip-chip light-emitting diodes (FC-LEDs); naturally textured p-GaN layer; patterned sapphire; sapphire textured layer; triple-light scattering layers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2008.919509

Filename

4476456