DocumentCode
1113691
Title
Study of delay times contributing to the ft of bipolar transistors
Author
Roulston, David J. ; Hebert, François
Author_Institution
University of Waterloo, Waterloo, Ont., Canada
Volume
7
Issue
8
fYear
1986
fDate
8/1/1986 12:00:00 AM
Firstpage
461
Lastpage
462
Abstract
Delay times contributing to the value of transition frequency ft of a bipolar transistor are determined from computer analysis for a typical integrated circuit device. The computed ft values are compared with experimental data.
Keywords
Bipolar transistors; Capacitance measurement; Circuit analysis computing; Current density; Delay effects; Doping; Electrical resistance measurement; Frequency; Poisson equations; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1986.26439
Filename
1486262
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