Title :
Study of delay times contributing to the ftof bipolar transistors
Author :
Roulston, David J. ; Hebert, François
Author_Institution :
University of Waterloo, Waterloo, Ont., Canada
fDate :
8/1/1986 12:00:00 AM
Abstract :
Delay times contributing to the value of transition frequency ftof a bipolar transistor are determined from computer analysis for a typical integrated circuit device. The computed ftvalues are compared with experimental data.
Keywords :
Bipolar transistors; Capacitance measurement; Circuit analysis computing; Current density; Delay effects; Doping; Electrical resistance measurement; Frequency; Poisson equations; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1986.26439
