DocumentCode
1113708
Title
A hot-hole erasable memory cell
Author
Liang, Mong-Song ; Lee, Tien-Chiun
Author_Institution
Advanced Micro Devices, Sunnyvale, CA
Volume
7
Issue
8
fYear
1986
fDate
8/1/1986 12:00:00 AM
Firstpage
465
Lastpage
467
Abstract
Electrical erasure of in-system memory chips has always been a desire for circuit operation. A novel technique which utilizes hot-hole injection in the snapback regime for memory erasure is described. This operation does not require a high-cost quartz lid or a special device structure. Although endurance characteristics are limited by channel hot-carrier-induced degradation, hundreds of WRITE and ERASE cycles can be easily achieved.
Keywords
Bidirectional control; Channel hot electron injection; Current measurement; Degradation; EPROM; Hot carriers; MOS integrated circuits; MOSFET circuits; Nonvolatile memory; Tunneling;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1986.26441
Filename
1486264
Link To Document