• DocumentCode
    1113721
  • Title

    Low-energy ion beam oxidation of silicon

  • Author

    Todorov, S.S. ; Shillinger, S.L. ; Fossum, Eric R.

  • Author_Institution
    Columbia University, New York, NY
  • Volume
    7
  • Issue
    8
  • fYear
    1986
  • fDate
    8/1/1986 12:00:00 AM
  • Firstpage
    468
  • Lastpage
    470
  • Abstract
    A low-energy oxygen ion beam with energy below 100 eV has been applied to the oxidation of unheated silicon substrates. Ultrathin (∼45 Å) FET-gate-quality oxides have been produced for the first time at room temperature using this technique. The high electrical quality of the oxides is demonstrated by the successful fabrication of n-channel MOSFET´s.
  • Keywords
    Fault location; Ion beams; Optical device fabrication; Oxidation; Plasma devices; Plasma immersion ion implantation; Plasma materials processing; Plasma temperature; Silicon; Sputtering;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1986.26442
  • Filename
    1486265
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1113721