Title :
Low-energy ion beam oxidation of silicon
Author :
Todorov, S.S. ; Shillinger, S.L. ; Fossum, Eric R.
Author_Institution :
Columbia University, New York, NY
fDate :
8/1/1986 12:00:00 AM
Abstract :
A low-energy oxygen ion beam with energy below 100 eV has been applied to the oxidation of unheated silicon substrates. Ultrathin (∼45 Å) FET-gate-quality oxides have been produced for the first time at room temperature using this technique. The high electrical quality of the oxides is demonstrated by the successful fabrication of n-channel MOSFET´s.
Keywords :
Fault location; Ion beams; Optical device fabrication; Oxidation; Plasma devices; Plasma immersion ion implantation; Plasma materials processing; Plasma temperature; Silicon; Sputtering;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1986.26442
