DocumentCode
1113724
Title
Modeling of continuous-wave self-frequency-doubling microchip laser for Yb3+:YAl3(BO3)4 crystal
Author
Huang, Zhiyun ; Gong, Xinghong ; Huang, Yidong ; Luo, Zundu
Author_Institution
Fujian Inst. of Res. on the Struct. of Matter, Chinese Acad. of Sci., Fujian, China
Volume
40
Issue
10
fYear
2004
Firstpage
1441
Lastpage
1449
Abstract
Based on a quasi-three-level system, a model of continuous wave (CW) self-frequency-doubling (SFD) laser for the end-pumped Yb3+:YAl3(BO3)4 (Yb3+:YAB) microchip is proposed. The effect of fluorescence concentration quenching (FCQ), the temperature distribution in the microchip medium, and then the refractive index distribution resulting from the thermal effect in the medium, the absorption of host, and the spatial distribution of SFD beam have been taken into account in the model. The calculated results are compared with those of experiments, and it reveals that this model is reasonable. It can be applied not only to the CW SFD laser of the Yb3+:YAB microchip, but also to the quasi-three-level CW SFD laser of other microchips.
Keywords
aluminium compounds; microchip lasers; optical harmonic generation; optical materials; optical pumping; radiation quenching; refractive index; temperature distribution; thermo-optical effects; ytterbium; yttrium compounds; YAl3(BO3)4:YB3+; Yb3+:YAl3(BO3)4 crystal; continuous-wave self-frequency-doubling microchip laser modeling; end pumping; fluorescence concentration quenching; quasithree-level system; refractive index distribution; temperature distribution; thermal effect; Absorption; Fluorescence; Laser modes; Laser theory; Microchip lasers; Neodymium; Nonlinear optics; Optical harmonic generation; Optical refraction; Optical variables control; +$: $hboxYAl_; $hboxYb^; SFD; _4$ crystal; hboxBO_; microchip laser; model; self-frequency doubling;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.2004.834778
Filename
1337025
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