DocumentCode :
1113732
Title :
Solid-phase epitaxial Pd/Ge ohmic contacts to In1-x Gax Asy P1-y /InP
Author :
Chen, W.X. ; Hsueh, S.C. ; Yu, P.K.L. ; Lau, S.S.
Author_Institution :
University of California, San Diego, La Jolla, CA
Volume :
7
Issue :
8
fYear :
1986
fDate :
8/1/1986 12:00:00 AM
Firstpage :
471
Lastpage :
473
Abstract :
A Pd/Ge metallization to InGaAsP/InP semiconductors, formed with solid-phase epitaxy (SPE) technique, has been investigated in this study. With this method, ohmic contacts with low specific contact resistance ( 
Ω.cm2) have been achieved on p-type In0.53 Ga0.47 As( 
/cm3). The same contact scheme also gives low specific contact resistance ( 
Ω.cm2) on n-type In0.53 Ga0.47 As ( 
/cm3). Excellent surface morphology is observed in all the samples, and the contacts do not deteriorate for at least 4 h at temperatures between 300 and 500°C.
Ω.cm2) have been achieved on p-type In /cm3). The same contact scheme also gives low specific contact resistance ( Ω.cm2) on n-type In /cm3). Excellent surface morphology is observed in all the samples, and the contacts do not deteriorate for at least 4 h at temperatures between 300 and 500°C.Keywords :
Contact resistance; Epitaxial growth; Gold; Indium phosphide; Metallization; Ohmic contacts; Semiconductor materials; Surface morphology; Surface resistance; Zinc;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1986.26443
Filename :
1486266
Link To Document :
