Novel NMOS transistors with near-zero depth conductor/thin insulator/semiconductor (CIS) source and drain junctions

Suitably designed conductor/thin insulator/semiconductor (CIS) structures have properties which approach those of an ideal p-n junction diode when the insulator is sufficiently thin to allow large current flows through it. A novel NMOS transistor is described in which such CIS diodes are used to advantage to replace the normal diffused source and drain junctions. This gives rise to simply fabricated devices with near-zero junction depths known to be of advantage in minimizing short-channel effects.