DocumentCode :
1113781
Title :
Study of carrier trapping in stacked dielectrics
Author :
Nozaki, S. ; Giridhar, R.V.
Author_Institution :
Intel Corporation, Santa Clara, CA
Volume :
7
Issue :
8
fYear :
1986
fDate :
8/1/1986 12:00:00 AM
Firstpage :
486
Lastpage :
489
Abstract :
Polysilicon/silicon-nitride/thermal-oxide/n-Si (SNOS) and polysilicon/oxide/silicon-nitride/thermal,oxide/n-Si (SONOS) capacitors were fabricated with various nitride thicknesses. It is shown that formation of an oxide layer on the nitride (NOX) reduces current conduction by more than two orders of magnitude at higher fields. Studies of the flat-band voltage shift with injected carrier fluence show opposite flat-band voltage shifts for SNOS (negative) and for SONOS (positive), under positive gate stress. NOX apparently acts as a hole injection barrier.
Keywords :
Capacitors; Dielectric measurements; Dielectric substrates; Electric variables measurement; Oxidation; Plasma measurements; Pollution measurement; SONOS devices; Silicon; Voltage;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1986.26448
Filename :
1486271
Link To Document :
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