DocumentCode :
1113796
Title :
Mid-IR optical limiter based on type-II quantum wells
Author :
Khurgin, Jacob B. ; Vurgaftman, Igor ; Meyer, Jerry R.
Author_Institution :
Dept. of Electr. & Comput. Eng., Johns Hopkins Univ., Baltimore, MD, USA
Volume :
40
Issue :
10
fYear :
2004
Firstpage :
1490
Lastpage :
1499
Abstract :
We show that strong optically induced intervalence band transitions in type-II InAs/GaSb/AlSb quantum wells lead to reverse saturable absorption, and propose to apply it to optical limiting in the mid-infrared spectral region. A salient feature of the proposed limiter is the flexibility of the design for different wavelengths and threshold powers. We develop a rigorous theoretical model of the proposed limiter, and use it to estimate the relationship between the key figures of merit: insertion loss, threshold, optical bandwidth and dynamic range. We investigate tradeoffs involving the dynamic range, optical bandwidth and thickness of the limiter, and show that one can attain a favorable combination of these.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; optical limiters; optical losses; optical saturable absorption; semiconductor quantum wells; InAs-GaSb-AlSb; dynamic range; insertion loss; mid-IR optical limiter; optical bandwidth; optically induced intervalence band transitions; reverse saturable absorption; type-II InAs/GaSb/AlSb quantum wells; Absorption; Bandwidth; Dynamic range; Insertion loss; Nonlinear optics; Optical losses; Optical refraction; Optical sensors; Power lasers; Protection; Nonlinear optics; optical limiters; semiconductor optics;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.2004.834776
Filename :
1337030
Link To Document :
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