DocumentCode
1113816
Title
Induced base transistor fabricated by molecular beam epitaxy
Author
Chang, Chun-Yen ; Liu, W.C. ; Jame, M.S. ; Wang, Y.H. ; Luryi, Serge ; Sze, Simon M.
Author_Institution
National Cheng Kung University, Taiwan, Republic of China
Volume
7
Issue
9
fYear
1986
fDate
9/1/1986 12:00:00 AM
Firstpage
497
Lastpage
499
Abstract
A novel three-terminal hot-electron device, the induced base transistor (IBT), has been fabricated by molecular beam epitaxy (MBE). Two-dimensional electron gas (2-DEG) induced by the applied collector field in an undoped GaAs quantum well is used as the base of the IBT. The common-base current gain α has been achieved as high as 0.96 under a collector bias of 2.5 V and an emitter current of 3 mA.
Keywords
Electrons; Etching; Fabrication; Gallium arsenide; Molecular beam epitaxial growth; Molecular beams; Ohmic contacts; Quantum well devices; Substrates; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1986.26451
Filename
1486274
Link To Document