Title :
Operational silicon bipolar inversion-channel field-effect transistor (BICFET)
Author :
Moravvej-Farshi, M.K. ; Green, Martin A.
Author_Institution :
University of New South Wales, Kensington, Australia
fDate :
9/1/1986 12:00:00 AM
Abstract :
A new transistor structure, the bipolar inversion-channel field-effect transistor (BICFET), has been recently proposed. Potential advantages include a very high frequency response and ability to be scaled to small dimensions. The first operational devices of this type are described and are shown to possess characteristics of the general form predicted.
Keywords :
Capacitance; Electron emission; FETs; Frequency response; Insulation; MOSFETs; Silicon; Substrates; Tunneling; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1986.26456
