Scaled GaAs MESFET´s with gate length down to 100 nm

Fully ion-implanted GaAs depletion MESFET´s with gate lengths from 1 µm down to 0.1 µm and with closely spaced source and drain contacts have been fabricated with electron-beam lithography. Gate-length dependence of transconductance, capacitance, output conductance, and threshold voltage is presented. Maximum transconductance obtained was 370 mS/mm for 0.1-µm gate length. The experimental data indicate that shallow implants do indeed result in better devices, but further vertical scaling of the devices is mandatory.