DocumentCode
1113901
Title
A novel high-power laser structure with current-blocked regions near cavity facets
Author
Shibutani, Takao ; Kume, Masahiro ; Hamada, Ken ; Shimizu, Hirokazu ; Itoh, Kunio ; Kano, Gota ; Teramoto, Iwao
Author_Institution
Matsushita Electronics Corporation, Takatsuki, Osaka, Japan
Volume
23
Issue
6
fYear
1987
fDate
6/1/1987 12:00:00 AM
Firstpage
760
Lastpage
764
Abstract
A novel high-power GaAlAs laser structure has been developed. In the new structure, current-blocked regions are formed near both facets for suppressing local temperature rise. Furthermore, the active layer is made thin only in the vicinity of the facets in order to enlarge the spot size without significant increase of the operating current. The experimentally fabricated laser with the new structure exhibited a COD power density 1.4 times higher and a degradation rate 1/2 times lower than those of the conventional structure lasers.
Keywords
Gallium materials/lasers; Laser resonators; Laser thermal factors; Absorption; Degradation; Laser modes; Optical fiber communication; Optical recording; Optical saturation; Power generation; Power lasers; Printers; Temperature;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1987.1073448
Filename
1073448
Link To Document