A revised boundary condition for the numerical analysis of Schottky barrier diodes

A new boundary condition for the computer simulation of Schottky barrier diodes is proposed. In this model the electron transport analysis can be extended to higher bias voltages by utilizing a current-dependent surface recombination velocity which is based on a drifted Maxwellian distribution of carrier velocities. Calculations based on this revised boundary condition predict a depletion of electrons at the Schottky boundary compared with an accumulation predicted in previously published calculations.