• DocumentCode
    1113917
  • Title

    An introduction to the development of the semiconductor laser

  • Author

    Dupuis, Russell D.

  • Author_Institution
    AT&T Bell Laboratories, Murray Hill, NJ
  • Volume
    23
  • Issue
    6
  • fYear
    1987
  • fDate
    6/1/1987 12:00:00 AM
  • Firstpage
    651
  • Lastpage
    657
  • Abstract
    In late 1962, the first semiconductor injection lasers were reported. While earlier workers had considered the possibility of light amplification in semiconductors, the achievement of high-efficiency electroluminescence from forward-biased GaAs p-n junctions was the event that catalyzed and accelerated efforts to demonstrate a semiconductor laser. This paper will attempt to review the experimental and theoretical work that preceded the actual demonstration of the semiconductor diode laser.
  • Keywords
    History; Semiconductor lasers; Conductors; Diode lasers; Electroluminescence; Gallium arsenide; Laser theory; Lasers and Electro-Optics Society; Notice of Violation; P-n junctions; Semiconductor lasers; Stimulated emission;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1987.1073450
  • Filename
    1073450