DocumentCode
1113917
Title
An introduction to the development of the semiconductor laser
Author
Dupuis, Russell D.
Author_Institution
AT&T Bell Laboratories, Murray Hill, NJ
Volume
23
Issue
6
fYear
1987
fDate
6/1/1987 12:00:00 AM
Firstpage
651
Lastpage
657
Abstract
In late 1962, the first semiconductor injection lasers were reported. While earlier workers had considered the possibility of light amplification in semiconductors, the achievement of high-efficiency electroluminescence from forward-biased GaAs p-n junctions was the event that catalyzed and accelerated efforts to demonstrate a semiconductor laser. This paper will attempt to review the experimental and theoretical work that preceded the actual demonstration of the semiconductor diode laser.
Keywords
History; Semiconductor lasers; Conductors; Diode lasers; Electroluminescence; Gallium arsenide; Laser theory; Lasers and Electro-Optics Society; Notice of Violation; P-n junctions; Semiconductor lasers; Stimulated emission;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1987.1073450
Filename
1073450
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