Title :
InGaAsP/InP planar buried heterostructure lasers with semi-insulating InP current blocking layers grown by MOCVD
Author :
Wakao, Kiyohide ; Nakai, Kenya ; Sanada, Tatsuyuki ; Kuno, Masaaki ; Odagawa, Tetsufumi ; Yamakoshi, Shigenobu
Author_Institution :
Fujitsu Lab., Atsugi, Japan
fDate :
6/1/1987 12:00:00 AM
Abstract :
InGaAsP/InP planar buried heterostructure (BH) lasers with semi-insulating current blocking layers have been realized using LPE and MOCVD hybrid growth. The planar structure has been obtained by developing the selective embedding growth in MOCVD. Low threshold current of 17 mA and high efficiency of 42 percent have been attained with the BH lasers. Small-signal modulation bandwidth of 10 GHz has also been achieved.
Keywords :
Epitaxial growth; Gallium materials/lasers; Semiconductor growth; Bandwidth; Chemical lasers; Distributed feedback devices; Indium phosphide; Insulation; Laser feedback; MOCVD; Parasitic capacitance; Substrates; Threshold current;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1987.1073452
