Title :
Simulation Research of Nonlinear Behavior Induced by the Charge-Carrier Effect in Resonant-Cavity-Enhanced Photodetectors
Author :
Guo, Jianchuan ; Zuo, Yuhua ; Zhang, Yun ; Ding, Wuchang ; Cheng, Buwen ; Yu, Jinzhong ; Wang, Qiming
Author_Institution :
Chinese Acad. of Sci., Beijing
Abstract :
In this paper, we have calculated and discussed in detail the nonlinear effect induced by three carrier effects: free-carrier absorption, bandgap filling, and bandgap shrinkage. The central wavelength of response of resonant-cavity-enhanced (RCE) photodetectors shifts according to the change of the refractive index, and the response of a given optical wavelength simultaneously changes. With an increasing As composition of In1-xGaxAsyP1-y and the spacer thickness, the nonlinear effect increases, but the -1-dB input saturation optical power and the -1-dB saturation photocurrent decrease. Bistable-state operation occurs when the input optical power is in the proper bistable region.
Keywords :
III-V semiconductors; energy gap; gallium arsenide; gallium compounds; indium compounds; optical bistability; optical saturation; photoconductivity; photodetectors; refractive index; InGaAsP; bandgap filling; bandgap shrinkage; bistable-state operation; charge-carrier effect; free-carrier absorption; nonlinear effect; optical wavelength; refractive index; resonant-cavity-enhanced photodetectors; saturation optical power; saturation photocurrent; Absorption; Filling; Nonlinear optics; Optical bistability; Optical refraction; Optical saturation; Optical variables control; Photodetectors; Photonic band gap; Resonance; Bistable state; changes in refractive index; charge-carrier effect; nonlinear; photodetector; photodiode; resonant-cavity-enhanced (RCE) photodetectors;
Journal_Title :
Lightwave Technology, Journal of
DOI :
10.1109/JLT.2007.902764
