• DocumentCode
    1114054
  • Title

    Memory at VLSI Circuits Symposium

  • Author

    Itoh, Kiyoo ; Kurata, Hideaki ; Osada, Kenichi ; Sekiguchi, Tomonori

  • Author_Institution
    Hitachi Ltd., Tokyo
  • Volume
    43
  • Issue
    4
  • fYear
    2008
  • fDate
    4/1/2008 12:00:00 AM
  • Firstpage
    762
  • Lastpage
    768
  • Abstract
    Over the last decades, the Symposium has been the premier forum for memory, putting more emphasis on seminal memory circuits rather than on record-setting performances with actually fabricated full chips, which has been the emphasis at the ISSCC. Indeed, it has been the breeding ground for DRAMs, SRAMs, flash memories, and other memories.
  • Keywords
    DRAM chips; SRAM chips; VLSI; flash memories; DRAM; SRAM; VLSI circuits symposium; flash memories; seminal memory circuits;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.2008.917527
  • Filename
    4476493
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1114054