Title :
AlGaAs/GaAs transverse junction stripe lasers fabricated on Si substrates using superlattice intermediate layers by MOCVD
Author :
Sakai, Shiro ; Hu, Xiong Wei ; Umeno, Masayoshi
Author_Institution :
University of Florida, Gainesville, FL
fDate :
6/1/1987 12:00:00 AM
Abstract :
TJS lasers are fabricated on Si substrates by diffusing Zn using sputtered SiO2as a mask, and the lasing properties are measured. The minimum threshold current of 379 mA and a differential efficiency of 2.2 percent have been obtained. The detailed fabrication procedure and laser characteristics are described in this paper.
Keywords :
Gallium materials/lasers; Semiconductor growth; Superlattices; DH-HEMTs; Diode lasers; Gallium arsenide; MOCVD; Optical device fabrication; Substrates; Superlattices; Temperature; Threshold current; Zinc;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1987.1073465
