DocumentCode :
1114076
Title :
Improved subthreshold characteristics of n-channel SOI transistors
Author :
Davis, J.R. ; Glaccum, Anthony E. ; Reeson, K ; Hemment, Peter L.F.
Author_Institution :
British Telecom Research Laboratories, Ipswick, Suffolk, U.K
Volume :
7
Issue :
10
fYear :
1986
fDate :
10/1/1986 12:00:00 AM
Firstpage :
570
Lastpage :
572
Abstract :
It has been found that certain n-channel MOSFET\´s fabricated on silicon-on-insulator (SOI) substrates formed by oxygen implantation can have 
, characteristics with very steep slopes in the subthreshold region. In contradiction to normal models for short-channel transistors on bulk silicon, the slope becomes steeper for shorter gate lengths or higher drain voltages. This effect is shown to be related to the kink in the output characteristics of transistors with floating islands.
, characteristics with very steep slopes in the subthreshold region. In contradiction to normal models for short-channel transistors on bulk silicon, the slope becomes steeper for shorter gate lengths or higher drain voltages. This effect is shown to be related to the kink in the output characteristics of transistors with floating islands.Keywords :
Annealing; Circuits; Doping; MOSFETs; Parasitic capacitance; Semiconductor device modeling; Silicon on insulator technology; Substrates; Temperature; Threshold voltage;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1986.26477
Filename :
1486300
Link To Document :
