DocumentCode :
1114095
Title :
InGaSbAs injection lasers
Author :
Drakin, A.E. ; Eliseev, Peter G. ; Sverdlov, B.N. ; Bochkarev, A. ; Dolginov, L. ; Druzhinina, L.V. ; Bochkarev, A. ; Dolginov, L. ; Druzhinina, L.
Author_Institution :
Academy of Sciences of the U.S.S.R., Moscow, U.S.S.R
Volume :
23
Issue :
6
fYear :
1987
fDate :
6/1/1987 12:00:00 AM
Firstpage :
1089
Lastpage :
1094
Abstract :
Double heterojunction structures of InGaSbAs/GaAl-SbAs emitting at 300 K in the wide wavelength range of 
m have been prepared by the LPE technique on gallium antimonide
m have been prepared by the LPE technique on gallium antimonideKeywords :
Carrier confinement; Fiber lasers; Gallium compounds; Gas lasers; III-V semiconductor materials; Infrared detectors; Semiconductor lasers; Substrates; Surface emitting lasers; Waveguide lasers;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1987.1073467
Filename :
1073467
Link To Document :
