• DocumentCode
    1114187
  • Title

    Al—Ge ohmic contacts to n-type GaAs

  • Author

    Zuleeg, R. ; Friebertshauser, Paul E. ; Stephens, J.M. ; Watanabe, S.H.

  • Author_Institution
    McDonnell Douglas Microelectronics Center, Huntington Beach, CA
  • Volume
    7
  • Issue
    11
  • fYear
    1986
  • fDate
    11/1/1986 12:00:00 AM
  • Firstpage
    603
  • Lastpage
    604
  • Abstract
    Ohmic contacts have been fabricated to n-type GaAs with an alloy of AL-Ge which has an eutectic temperature of 424°C with 53- weight percent Germanium. The lowest contact resistance of 1.4 × 10-6Ω.cm2was measured with a transfer length transmission line structure. The application to GaAs integrated-circuit design is demonstrated.
  • Keywords
    Alloying; Contact resistance; Electrical resistance measurement; Gallium arsenide; Germanium alloys; Gold; Integrated circuit interconnections; Nickel alloys; Ohmic contacts; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1986.26488
  • Filename
    1486311
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1114187