DocumentCode :
1114187
Title :
Al—Ge ohmic contacts to n-type GaAs
Author :
Zuleeg, R. ; Friebertshauser, Paul E. ; Stephens, J.M. ; Watanabe, S.H.
Author_Institution :
McDonnell Douglas Microelectronics Center, Huntington Beach, CA
Volume :
7
Issue :
11
fYear :
1986
fDate :
11/1/1986 12:00:00 AM
Firstpage :
603
Lastpage :
604
Abstract :
Ohmic contacts have been fabricated to n-type GaAs with an alloy of AL-Ge which has an eutectic temperature of 424°C with 53- weight percent Germanium. The lowest contact resistance of 1.4 × 10-6Ω.cm2was measured with a transfer length transmission line structure. The application to GaAs integrated-circuit design is demonstrated.
Keywords :
Alloying; Contact resistance; Electrical resistance measurement; Gallium arsenide; Germanium alloys; Gold; Integrated circuit interconnections; Nickel alloys; Ohmic contacts; Temperature;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1986.26488
Filename :
1486311
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1114187
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