DocumentCode :
1114215
Title :
On the temperature dependence of the 1/f noise Hooge parameter αH in n-channel Silicon JFET´s
Author :
Podör, Balint
Author_Institution :
Hungarian Academy of Sciences, Budapest, Hungary
Volume :
7
Issue :
11
fYear :
1986
fDate :
11/1/1986 12:00:00 AM
Firstpage :
610
Lastpage :
611
Abstract :
It is suggested that the temperature dependence of the empirical Hooge noise parameter αH deduced from recent noise measurements on n-channel Si-JFET\´s can be described as 
where 
K. The characteristic exponent might be correlated with the energy of the low-wavenumber phonons dominating the mobility through intervalley scattering.
where K. The characteristic exponent might be correlated with the energy of the low-wavenumber phonons dominating the mobility through intervalley scattering.Keywords :
Acoustic scattering; Electron devices; Electron mobility; Phonons; Semiconductor device noise; Silicon; Solid state circuits; Superluminescent diodes; Temperature dependence; Temperature distribution;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1986.26491
Filename :
1486314
Link To Document :
