• DocumentCode
    1114233
  • Title

    A fully planar heterojunction bipolar transistor

  • Author

    Tully, John W. ; Hant, W. ; O´Brien, B.B.

  • Author_Institution
    Northrop Research and Technology Center, Palos Verdes Peninsula, CA
  • Volume
    7
  • Issue
    11
  • fYear
    1986
  • fDate
    11/1/1986 12:00:00 AM
  • Firstpage
    615
  • Lastpage
    617
  • Abstract
    A fully planar heterojunction bipolar transistor (HBT) in the normal emitter-up configuration is reported. The process utilizes a two-step epitaxial deposition with an intervening selective ion implant of bases. A process is described, the aluminum lift-off (ALL) process, with which refractory metal contacts have been used. Large test devices fabricated have dc gains of β = 600.
  • Keywords
    Aluminum; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Implants; Inverters; Ion implantation; MOCVD; Resists; Sputter etching;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1986.26493
  • Filename
    1486316
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1114233