Title :
Improved cutoff frequency in vertical bipolar transistors fabricated with focused ion beam lateral base profiles
Author :
Yim, Hyung J. ; Greeneich, Edwin W.
Author_Institution :
Motorola, Inc., Mesa, AZ
fDate :
11/1/1986 12:00:00 AM
Abstract :
Improved high-frequency performance in vertical bipolar transistors in which the active base region is fabricated with focused ion beam (FIB) lateral doping profiles is demonstrated. Profiles which reduce base resistance, current crowding, and high-level injection effects have the most significant effect on high-frequency characteristics.
Keywords :
Bipolar transistors; Boron; Current measurement; Cutoff frequency; Doping profiles; FETs; Implants; Ion beams; Proximity effect; Substrates;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1986.26495
