Recent advances in ultrahigh-speed HEMT LSI technology

Author

Abe, Masayuki ; Mimura, Takashi ; Kobayashi, Naoki ; Suzuki, Masahisa ; Kosugi, Makoto ; Nakayama, Mitsuo ; Odani, Kouichiro ; Hanyu, Isamu

Author_Institution

Fujitsu Ltd., Atsugi, Japan

Volume

36

Issue

10

fYear

1989

fDate

10/1/1989 12:00:00 AM

Firstpage

2121

Lastpage

2131

Abstract

The current status of, and recent advances in, high electron mobility transistor (HEMT) technology for high-performance submicrometer VLSI are presented with a focus on materials, self-aligned device fabrication, and HEMT LSI implementation. The HEMT is a very promising device for ultrahigh-speed LSI/VLSI applications because of the high-mobility GaAs/AlGaAs heterojunction structure. The authors project an optimized chip delay of 40 ps at 10 K-gate VLSI at room temperature

Keywords

III-V semiconductors; VLSI; aluminium compounds; field effect integrated circuits; gallium arsenide; high electron mobility transistors; integrated circuit technology; 40 ps; GaAs-AlGaAs heterojunction structure; chip delay; high electron mobility transistor; self-aligned device fabrication; submicrometer VLSI; ultrahigh-speed HEMT LSI technology; Delay; Electron mobility; Gallium arsenide; HEMTs; Large scale integration; Paper technology; Power dissipation; Read-write memory; Transistors; Very large scale integration;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.40924

Filename

40924