Title :
A new oxidation-resistant self-aligned TiSi2process
Author :
Tseng, Hsun-Hua ; Wu, Ching-Yuan
Author_Institution :
National Chiao-Tung University, Taiwan, Republic of China
fDate :
11/1/1986 12:00:00 AM
Abstract :
This paper presents a thin amorphous Si (a-Si) on Ti as an oxidation-resistant material for a self-aligned TiSi2process. It is shown that a thin a-Si over Ti film will greatly suppress the interaction between Ti and ambient gases (N2and O2) during the thermal TiSi2formation cycle in conventional N2furnance while maintaining satisfactory self-aligned property after silicidation at a temperature below 630°C.
Keywords :
Amorphous materials; Annealing; Conductivity; Electrical resistance measurement; Etching; Oxidation; Silicidation; Silicides; Temperature; Thickness measurement;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1986.26496
