DocumentCode
1114275
Title
A Consideration on Turn-Off Failure of GTO with Amplifying Gate
Author
Hayashi, Yasuhide ; Suzuki, Toshiaki ; Ishibashi, Satoshi ; Sueoka, Tetsuro
Author_Institution
Meidensha Electric Manufacturing Company, Ltd., Development Division, Ohsaki 2-1-17, Shinagawa-ku, Tokyo, 141, Japan.
Issue
2
fYear
1987
fDate
4/1/1987 12:00:00 AM
Firstpage
90
Lastpage
97
Abstract
Using the high-power buried-gate GTO´s of various n-base carrier lifetimes, the turn-off failure phenomena peculiar to the amplifying gate (AG) GTO are investigated, under the conditions of short on-duration (30-200 ¿s) and lagging current operation. From the results of this investigation, it was found that there are three kinds of AG failure mode: the off-bias voltage for the AG is insufficient to turn-off the AG current, the ``miss-gate current´´ flows before the turn-off of the AG is completed, and the miss-gate current exceeds the sensitivity of the AG. As a result, the factors causing the AG failure and the desirable driving method are clarified.
Keywords
Anodes; Breakdown voltage; Cathodes; Charge carrier lifetime; Conductivity; Electrodes; Motor drives; Pulse width modulation inverters; Thyristors; Uninterruptible power systems;
fLanguage
English
Journal_Title
Power Electronics, IEEE Transactions on
Publisher
ieee
ISSN
0885-8993
Type
jour
DOI
10.1109/TPEL.1987.4766342
Filename
4766342
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